Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

Blog Article

The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time.Some interesting phenomena are observed and analyzed.In particular, the presence of In droplet tenga air-tech regular on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode.Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters.

It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling.The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions.These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire gul rune d2 heterostructures for different applications.